Tuning the electrical performance of solution-processed In2O3TFTs by low-temperature with HfO2-PVP hybrid dielectric

Here in, we investigated the solution-processed and hysteresis-free indium oxide (In2O3) thin-film transistors (TFTs) fabricated with hafnium oxide-poly(vinyl)phenol (HfO2-PVP) hybrid thin film as gate dielectric by a low temperature sol-gel method. The exhibits unique properties of leakage current density 1.2 × 10−8 A/cm2, areal capacitance 44.4 nF/cm2 constant (k) 6.5 at 1 kHz. In addition, films show high-quality homogeneous pin-hole free surface roughness (Rq) 0.75-nm display energy 36.7 mJ/m2 hydrophobic behavior. This material is then used in In2O3 TFTs insulator. Here, semiconductor channel layer examined 200 °C 230 temperatures for TFT characteristics. final device showed much improved electrical performance mobility (μsat) 2.6 cm2/V.s, Ion/Ioff ratio 105, subthreshold swing (SS) 330 mV/dec, threshold voltage (VT) 0.1 V operating voltages because better interface between fewer charge carriers traps. study could be an effective approach next generation all-solution fabrication that play vital role optoelectronics applications.